Ionizing Radiation and Hot Carrier E ects in SiC MOS Devices
نویسندگان
چکیده
We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC conduction band associated with oxide traps.
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